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尹以安

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尹以安,博士,副研究员,硕士生导师。2008年厦门大学凝聚态物理专业博士毕业。主要从事新型结构蓝、绿、紫LED、太阳能电池及可见光通信方面的研究工作。近几年年发表论文30多篇。申请发明专利多项。主持包括广东省科技计划、广东省自然科学基金、广东省产学研、广州市科技计划等在内的多个科研项目。


联系电话:020-85212667-809;

邮箱:20081128@m.scun.edu.cn




厦门大学物理与机电学院 博士学位 

2008.7
    

 华南师范大学光电子材料与技术研究所,从事新型宽阱带半导体光电子材料与器件及可见通信方面研究工作。

2008.7~至今

美国Unversity of South Dakato 物理系作访问学者


012年-2013年



广东省公益能力与建设专项资金项目,2015A010105025,面向高效紫外光 AlGa(In)N材料的极化掺杂及改善器件性能研究,主持

2015/01-2017/12

广东省省部产学研项目,2011B090400401,高亮度功率AlGaInP四元系LED芯片结构设计及制备,主持

2011/09-2013/10

广东省自然科学基金项目,S2011040005150,基于AlInN材料的高质量P型掺杂及紫外LED的研制,已结题,主持

2011/10-2013/10

广州市科技计划一般项目,201510010229,极化诱导掺杂   Al(Ga)InN及其增强紫外LED发光效率研究

2011/10-2013/10

广东省科技计划重大项目,2015B010112002,通信照明共用的白光LED器件和集成模块关键技术的开发,负责人之一

2016/01-2018/12

国家自然科学基金项目,11474105,高可控GaN基纳米线及其异质核壳结构的生长与性能研究,参与

2015/01-2018/12


1) Li Liu, Yi-anYin*,Yong Zhang,High quality (In)GaN films on homoepitaxial substrates, Superlattices and Microstructures 102 (2017) 166 e 172

2)  Shanlin Wang,Yi-anYin*,Naiyin Wang Graded AlGaN/AlGaN Superlattice Insert LayerImproved Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes, JOURNAL OF DISPLAY TECHNOLOGY, VOL. 12, NO. 10, OCTOBER 2016

3)   Yi-anYin,Naiyin Wang, Shuti Li,Yong Zhang and Guanghan Fan, Advantages of deep-UV AlGaN light-emitting diodes with an AlGaN/AlGaN superlattices electron blocking layer,Appl. Phys. A,Vo.119, Issue 1, pp 41-44,03,2015.

4) Yi-anYin,Naiyin Wang, Guanghan Fan, and Shuti Li,Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier,IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 82849-2853, AUGUST 2014

5) Yi-anYin,Naiyin Wang,Yong Zhang and Guanghan Fan,Investigation of AlGaN-based deep-ultraviolet light-emitting diodes with composition-varying AlGaN multilayer barriers,Superlattice and Microstructures,76(2014)149-155

6)    Wang, Naiyin,Yi-anYin*,Performance Analysis of GaN-Based Light-Emitting Diodes With Lattice-Matched InGaN/AlInN/InGaN Quantum-Well Barriers,Journal of Display Technology,2015,11(12):1056-1060

7)   Yun-Yan Zhang,  Yi-An Yin* “Performance enhancement of blue light-emitting diodes with a special designed  AlGaN/GaN superlattice electron-blocking layer”,Appl. Phys. Lett. 99, 221103 (2011)

8)   Yun-Yan Zhang,  Yi-An Yin* Performance enhancement of near-UV light-emitting diodes with an InAlN/GaN superlattice electron-blocking laye“,IEEE Electron Devices Lett., vol. 33, no. 7, pp. 994–996, Jul. 2012

9) Hailong Wang,Yian Yin*,Shuti Li,“Improvement of the crystal quality of AlInN by using the patterned sapphire substrate” Advances in Optoelectronics and Micro/Nano-Optics (AOM), 2010 OSA-IEEE-COS

10)  Yian Yin, Baolin Liu, Baoping Zhang, Guoxing Lin, “The effect of surface layer of capping p-InGaN/p-GaN superlattices on the contact to p-GaN, supelattice and microstructure ,Vol.43,No.3:162–167,2008

11) Qing-Hong Zheng ,Yi-An Yin, Li-Hong Zhu,Jin Huang, Xiao-Ying Li and Bao-Lin Liu,“Tailoring the hole concentration in superlattices based on nitride alloys” ,Applied  Physicis Letter,94,222104(2009)

 


1.“一种p-GaN低阻欧姆接触制备方法”,专利号:ZL2007100099553
2.“氮化镓基蓝光发光二极管”,公开号:CN1862843

 

 

 

 

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