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江丰

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       江丰,男,19855月生于浙江杭州 201212月获南京航空航天大学工学博士学位。20131-20172月期间先后作为日本新能源产业技术综合开发机构NEDO研究员,日本学术振兴会 JSPS海外特别研究员在大阪大学太阳能所从事化合物半导体Cu2ZnSnS4薄膜太阳电池/光电子器件的研究工作20172月作为华南师范大学高层次人才引进计划“青年拔尖人才”到光电子材料与技术研究所工作。至今获得1项日本和2项中国发明专利, 取得电沉积Cu2ZnSnS4薄膜太阳电池的世界最高光电转换效率7.99%8.1%,取得Cu2ZnSnS4薄膜太阳制氢最高转换效率1.63%并首次实现了Cu2ZnSnS4无偏压太阳光分解水制氢的应用梦想。

至今发表学术研究论文40余篇,其中以第一作者身份在 Advanced Energy Materials,  Journal of the American Chemical Society,  Progress in Photovoltaics,  Chemistry of Materials,  Journal of The Electrochemical Society,  Applied Physics Express等国外知名期刊上发表论文14篇。2014获得南京航空航天大学优秀博士学位论文奖; 2013年获13届重庆市期刊好作品自然科学论文一等奖;相关成果已经在欧洲材料研究大会E-MRS,世界光伏大会WCPEC-6, 光伏大会PVSEC-23/PVSEC-25等光伏/光电领域高水平国际会议上做口头报告(Oral Presentation)、邀请报告(Invited Talk)10余次。

 

联系方式: fengjiangsolar@126.com

TEL: 13913817369




鲁东大学 物理与光电工程学院        学士2003/9-2007/6
南京航空航天大学 材料科学技术学院    博士2007/9-2012/12
大阪大学 太阳能所     NEDO研究员,特任研究员等2013/1-2015/3

大阪大学 太阳能所     JSPS海外特别研究员

2015/4-2017/

华南师范大学 光电子材料与技术研究所     研究员

2017/2-至今



华南师范大学青年拔尖人才计划启动基金(2017-2021   主持

     日本学术振兴会外国人特别研究员奖励基金(2015-2017  主持 

  日本新能源产业技术综合开发机构NEDO项目超低コスト製造プロセス     開発に 向けたレアメタルフリー無機化合物薄膜太陽電池の非真空作製     法に関する研究2011-2013 参与 


                 国家自然科学基金面上项目低成本环保型Cu2ZnSnS4/a-Si太阳电池材料与光伏性能研究2012-2015 参与    

      国家863项目高效硅基叠层太阳能电池材料与关键工艺研究2006-2010 参与 




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1. Feng Jiang, Chigusa Ozaki, Gunawan, Takashi Harada, Zeguo Tang, Takashi Minemoto, Yoshitaro Nose, Shigeru Ikeda, Effect of Indium doping on surface optoelectrical properties of Cu2ZnSnS4 photoabsorber and interfacial/photovoltaic performance of cadium free In2S3/Cu2ZnSnS4 heterojunction thin film solar cell. Chemistry of Materials, 2016, 283283-3291

2. Feng Jiang, Gunawan, Takashi Harada, Yongbo Kuang, Tsutomu Minegishi, Kazunari Domen and Shigeru Ikeda, Pt/In2S3/CdS/Cu2ZnSnS4 thin film as an efficient and stable photocathode for water reduction under sunlight radiation. Journal of the American Chemical Society, 2015,137, 13691-13697

3. Feng Jiang, Shigeru Ikeda, Zeguo Tang, Takashi Minemoto, Wilman Septina, Takashi Harada, Michio Matsumura, Impact of alloying duration of an electrodeposited Cu/Sn/Zn metallic stack on properties of Cu2ZnSnS4 absorbers for thin-film solar cells. Progress in Photovoltaics: Research and Applications, 2015, 23, 1884-1895.

4. Feng Jiang, Shigeru Ikeda, Takashi Harada, Michio Matsumura, Pure sulfide Cu2ZnSnS4 thin film solar cells fabricated by preheating an electrodeposited metallic stack. Advanced Energy Materials, 2014, 4(7), 1301381

5. Feng Jiang, Honglie Shen, Effect of the thickness on the optoelectronic properties of SnS films and photovoltaic performance of novel SnS/i-a-Si/n-a-Si thin film solar cells, Applied Physics A, 2014, 117,2167–2173

6. Feng Jiang, Shigeru Ikeda, Takashi Harada, Akiko Ide, Akiko Mochihara, Kenji Yoshino, Michio Matsumura, Fabrication of an efficient electrodeposited Cu2ZnSnS4 based solar cell with more than 6% conversion efficiency using a sprayed Ga doped ZnO window layer., RSC Advances, 2014, 4, 24351-24355

7. Feng Jiang, Honglie Shen, Research on the photoresponse current and photosensitive properties of Cu2ZnSnS4 thin film prepared by sulfurization of a sputtered metal precursor, RSC Advances, 2013, 3, 23474 -23481.

8. Feng Jiang, Honglie Shen. Fabrication and photovoltaic properties of Cu2ZnSnS4 /i-a-Si/n-a-Si thin film solar cell. Applied Surface Science, 2013, 280, 138-143.  

9. Feng Jiang, Honglie Shen, Jin Jiao, Formation of photoconductive SnS thin films through reaction of Sn-metal films in sulfur-vapor, ECS Journal of Solid State Science and Technology, 2013, 2, 11, P478-P484.  

10. Feng Jiang, Honglie Shen, Wei Wang and Lei Zhang, Preparation and properties of Cu2ZnSnS4 absorber and Cu2ZnSnS4/Amorphous silicon thin film solar cell. Applied Physics Express, 2011, 4, 074101.  

11. Feng Jiang, Honglie Shen, Wei Wang and Lei Zhang. Preparation of SnS film by sulfurization and SnS/a-Si heterojunction solar cells. Journal of the Electrochemical Society, 2012, 159(3) H235-238.

12. Feng Jiang, Honglie Shen, Jiale Jin and Wei Wang. Preparation and Optoelectronic properties of Cu2ZnSnS4 film. Journal of the Electrochemical Society, 2012, 159(6), H565-569.  

13. Feng Jiang, Honglie Shen, Chao Gao, Bing Liu, Long Lin, and Zhou Shen. Preparation and properties of SnS film grown by two- stage process. Applied Surface Science, 2011, 257, 4901-4905.

14. Feng Jiang, Honglie Shen, Wei Wang. Optical and electrical properties of Cu2ZnSnS4 film prepared by sulfurization method. Journal of Electronic Materials, 2012, 41, 8, 2204-2209.

15. Thi Hiep Nguyen, Wilman Septina, Shotaro Fujikawa, Feng Jiang, Takashi Harada, Shigeru Ikeda, Cu2ZnSnS4 thin film solar cell with 5.8% conversion efficiency obtained by a facile spray pyrolysis technique. RSC Advances, 2015, 5, 77565 -77571

16. T.Hamada, A. Fukuyama, F. Jiang, S. Ikeda and T. Ikari, Effect of preheating time on uniformity of electrodeposited Cu2ZnSnS4 thin films studied by carrier lifetime and photoluminescence measurements. Physica Status Solidi C, 2015, 12, 725-728

17. Chao Gao, Honglie Shen, Feng Jiang, Hao Guan. Preparation of Cu2ZnSnS4 film by sulfurizing solution deposited precursors. Applied Surface Science, 2012, 261, 189-192.  

18. Wei Wang, Honglie Shen, Feng Jiang, Xiancong He, Zhihao Yue. Low-cost chemical fabrication of Cu2ZnSnS4 microparticles and film. Journal of Materials Science-Materials in Electronic, 2013, 24(6), 1813-1817.  

19. Lei Zhang, Honglie Shen, Jiayi You, Feng Jiang, Tianru Wu, Zhengxia Tang, Polycrystalline silicon films fabricated by rapid thermal annealing. Journal of Materials Science-Materials in Electronic, 2012, 23, 1279-1283.  

20. Lei Zhang, Honglie Shen, Zhihao Yue, Feng Jiang, Tianru Wu, Yuanyuan Pan, Effect of emiter layer doping concentration on the performance of a silicon thin film heterojunction solar cell. Chinese Physics B, 2012, 22(1), 16803-16807.

21. Chao Gao, Hongie.Shen, TianruWu, Lei Zhang and Feng Jiang, Preparation and growth mechanism of zinc blende structure tin sulfide films by successive ionic layer absorption and reaction. Journal of Crystal Growth, 2010, 312, 3009-3013.

22. Honglie Shen, Hui Zhang, Linfen Lu, Feng Jiang, Chao Yang, Preparation and properties of AZO thin films on different substrates, Progress in Nature Science: Materials International, 2010, 20, 44-48.  

23. Linfeng Lu, Honglie Shen, Hui Zhang, Feng Jiang, Binbin Li, Long Lin. Effects of Ar flow rate and substrate temperature on the properties of AZO thin films by RF magnetron sputtering. Optoelectron. Adv. Mater. Rapid Communications, 2010, 4(4), 596-600.  

24. Zhengxia Tang, Honglie Shen, Linfeng Lu, Feng Jiang, Yan Guo, Jiancang Shen. Polycrystalline silicon thin film prepared by aluminum-induced crystallization with native silicon oxide at the aluminum and silicon interface. J. Optoelectron. Adv. Mater, 2009, 11(8), 1077-1081.

25. Zhengxia Tang, Honglie Shen, Feng Jiang, Ru Fang R, Linfeng Lu, Haibin Huang, Hong Cai. Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile. ACTA PHYSICA SINCA, 2010, 59(12), 8770-8776.

26. Linfeng Lu, Honglie Shen, Feng Jiang et al, The enhanced conductivity of AZO thin films on soda lime glass with untrathin Al2O3 buffer layer. Physica B, 2010, 405(16), 3320-3323.

27. 江丰, 沈鸿烈, . Al2O3 过渡层厚度对AZO 薄膜性能的影响.电子元件与材料2010,29, 1-4.

28. 江丰,沈鸿烈. Cu2ZnSnS4 薄膜及其太阳电池的研究进展. 半导体光电, 2011, 32(6), 756-761

29. 江丰沈鸿烈. Cu2ZnSnS4 薄膜光电性能及其太阳电池的制备和研究. 功能材料, 2012, 15(43), 2040-2044.

30. 江丰,沈鸿烈,刘斌,高超,沈州, 二步法制备太阳能电池吸收层材料SnS薄膜的研究,第十一届中国光伏大会暨展览会会议论文集,南京,2010822-825

31. 吉强, 沈鸿烈,江丰,王威,曾友宏, SnS 薄膜的步法制备及其光电性能研究,影像科学与光化学,2013, 31(2), 150-156.

32. 唐正霞,沈鸿烈,解尧,鲁林峰,江丰,沈剑沧, 100um大晶粒多晶硅薄膜的铝诱导法制备,功能材料,<span style=";font-family:'Times New Roma

 

 

 

 

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