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高芳亮 特聘研究员


6.jpg 高芳亮 特聘研究员


   高芳亮,工学博士,华南师范大学特聘研究员,分别在中南大学、暨南大学及华南理工大学获得学士、硕士及博士学位。主要从事III-V化合物半导体材料外延生长及其光电器件、能源方面应用研究,以第一/通讯作者在SmallNanoscaleAppl. Phys. Lett.等期刊发表SCI论文13篇;申请国际PCT专利5件,其中获授权美国发明专利1件、新加坡发明专利1件;申请中国发明专利37件,其中获授权发明专利11件;研究成果获广东省技术进步二等奖、广东省技术发明二等奖等多项奖励。主持装备预研教育部联合基金、广东省自然科学基金、中国博士后基金等5项省部级项目。


联系方式gaofl@m.scnu.edu.cn


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2019-至今 华南师范大学 特聘研究员

2016.12-2018.12 华南理工大学 博士后



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[1] Zhenzhu Xu, Shuguang Zhang, Jinghan Liang, Jing Lin, Yuefeng Yu, Runze Li, Fangliang Gao*, Guoqiang Li*, Surface passivation of InGaN nanorods using H3PO4 treatment for enhanced photoelectrochemical performance, JOURNAL OF POWER SOURCES, 419, 65-71, 2019

[2] Zhenzhu Xu, Shuguang Zhang, Fangliang Gao*, Lei Wen, Yuefeng Yu, Guoqiang Li*, Correlations among morphology, composition, and photoelectrochemical water splitting properties of InGaN nanorods grown by molecular beam epitaxy, NANOTECHNOLOGY, 29(47), 475603, 2018

[3] Fangliang Gao, Lei Wen, Zhenzhu Xu, Jinglei Han, Yuefeng Yu, Shuguang Zhang*, Guoqiang Li*, Growth of InN Nanowires with Uniform Diameter on Si(111) Substrates: Competition Between Migration and Desorption of In Atoms, SMALL, 13(21), 1603775, 2017

[4] Zhenzhu Xu, Yuefeng Yu, Jinglei Han, Lei Wen, Fangliang Gao*, Shuguang Zhang, Guoqiang Li*, The mechanism of indium-assisted growth of (In)GaN nanorods: eliminating nanorod coalescence by indium-enhanced atomic migration, NANOSCALE, 9(43), 16864-16870, 2017

[5] Fangliang Gao, Guoqiang Li*, Quality-enhanced In0.3Ga0.7As film grown on GaAs substrate with an ultrathin amorphous In0.6Ga0.4As buffer layer, APPLIED PHYSICS LETTERS, 104(4), 42104, 2014


 

 

 

 

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