1 | Si图形衬底的制备及半极性GaN生长 | | 华南师范大学学报 |
2 | LED正向压降随温度的变化关系的研究 | 2003-03-14 | 光子学报（ISSN1004-4213;CN61-1235/04） |
3 | 渐变异质结在HB-LED器件中的应用以及实现技术 | 2003-03-14 | 量子电子学报（ISSN1007-5461;CN34-1163/TN） |
4 | AlGaInP四元系材料双异质结发光二极管的最佳Al组分分析 | 2003-03-14 | 量子电子学报（ISSN1007-5461;CN34-1163/TN） |
5 | AlGaInP四元系材料渐变异质结及其在高亮度发光二极管器件中的应用 | 2003-03-14 | 物理学报（ISSN1000-3290;CN11-1958/O4） |
6 | 芯片键合材料对功率型LCD的影响 | 2003-03-14 | 半导体光电(CN50-1092/TN) |
7 | 功率型LED热阻测量的新方法 | 2003-03-14 | 半导体光电(CN50-1092/TN) |
8 | 现代高新技术与传统管理的磨合 | 2003-03-14 | 科技进步与对策（ISSN1001-7348;CN42-1224/G3） |
9 | MOCVD生长的动力学模式探讨 | 2003-03-14 | 华南师范大学学报（ISSN1000-5463;CN44-1138/N） |
10 | 测量仪表的多机通讯 | 2003-03-14 | 微计算机信息(ISSN1000-372X;CN14-1128/TP) |
11 | LED显示屏亮度和颜色的调整方法 | 2003-03-14 | 液晶与显示(ISSN1007-2780;CN22-1259) |
12 | 可自动调整的标准磁场源 | 2003-03-14 | 计量与测试技术(ISSN1004-6941;CN51-1412/TB) |
13 | 发光二极管照射对腰部理疗作用分析 | 2003-03-14 | 激光杂志(ISSN0253-2743;CN50-1085/TN） |
14 | 基于CPLD的计算机接口电路设计技巧 | 2003-03-14 | 微计算机信息(ISSN1000-372X;CN14-1128/TP） |
15 | 改进实用型LED生物光源系列 | 2003-03-14 | 应用激光（ISSN1000-372X;CN31-1375） |
16 | 用于细胞及组织培养的高强度LED生物光源 | 2003-03-14 | 激光生物学报（ISSN1007-7146;CN43-1264/Q） |
17 | 用于细胞及组织培养的低强度LED生物光源 | 2003-03-14 | 激光杂志(ISSN0253-5463;CN50-1085/TN） |
18 | 用于细胞及组织培养的中等强度LED生物光源 | 2003-03-14 | 光学技术（ISSN1002-1582;CN11-1879/O4） |
19 | P型掺杂对AlGaInP双异质结发光二极管的Al组分确定的影响 | 2003-03-14 | 华南师范大学学报（ISSN1000-5463;CN44-1138/N） |
20 | GaInP/(AlxGa1-x)InP多量子阱结构的光荧光特性分析 | 2003-03-14 | 华南师范大学学报（ISSN1000-5463;CN44-1138/N） |
21 | 流动注射在线共沉淀HG-AFS测定痕量铅 | 2003-03-14 | 分析实验室（ISSN1000-0720;CN11-2017/TF） |
22 | The influence of Si-doping to the characteristics of AlGaInP/GaInP multiple quantum wells | 2004-03-14 | Physica B |
23 | Study of the blue luminescence in unintentional doped GaN films grown by MOCVD | 2004-03-14 | Journal of Luninescence |
24 | 高亮度发光二极管多层结构外延片电化学C-V测试分析 | 2004-03-14 | 量子电子学报 |
25 | 未掺杂GaN外延膜的结晶特性与蓝带发光关系研究 | 2004-03-14 | 量子电子学报 |
26 | InGaN 薄膜的弯曲因子和斯托克斯移动研究 | 2004-03-14 | 光学学报 |
27 | 自动换量限的数字万用表 | 2004-03-14 | 仪器仪表学报 |
28 | first principles study of wurtzite and zinc blende GaN:a comparison of the electronic and optical properties | 2005-03-14 | Physics Letter A |
29 | Relationship between structure characteristic and blue luminescence in unintentional doped GaN layers | 2005-03-14 | Materials Science and Engineering B |
30 | Preparation of InP-SiO2 3D photonic crystals | 2005-03-14 | Physica B |
31 | 生长模式控制对MOCVD生长GaN性能的影响 | 2005-03-14 | 华南师范大学学报A |
32 | 应变对AlxGa1-xN能带间隙弯曲系数和能带结构的影响 | 2005-03-14 | 半导体光电 |
33 | 掺Si对AlGaInP/GaInP多量子阱发光性能的影响 | 2005-03-14 | 半导体学报 |
34 | 人工欧泊填充InP后的形貌和光学特性 | 2005-03-14 | 光子学报 |
35 | Si掺杂的AlGaInP/GaInP多量子阱光学特性 | 2005-03-14 | 量子电子学报 |
36 | 人工蛋白石光子晶体制备技术及改性研究进展 | 2005-03-14 | 激光与光电子学进展 |
37 | 垒层Si掺杂对AlGaInP/GaInP多量子阱性能的影响 | 2005-03-14 | 半导体技术 |
38 | 缓冲层用于改善硅基氮化镓外延薄膜质量 | 2005-03-14 | 光电子技术与信息 |
39 | 量子级联激光器的电路模型分析 | 2005-03-14 | 量子电子学报 |
40 | 基于对数关系的多量子阱VCSELs阈值特性研究 | 2005-03-14 | 光电子技术与信息 |
41 | 扫描电镜用于人工蛋白石模板中填充InP的形貌研究 | 2005-03-14 | 人工晶体学报 |
42 | 垂直沉积法在GaAs衬底上制备有序二氧化硅胶体晶体 | 2005-03-14 | 光电子·激光 |
43 | Ⅲ-Ⅴ族混合晶体的长波长光学声子 | 2005-03-14 | 量子电子学报 |
44 | AlGaInP/GaAs外延层的倒易空间图分析 | 2005-03-14 | 华南师范大学学报 |
45 | 芴基荧光共聚物与芴基磷光共聚物光电性能的比较研究 | 2006-03-14 | 江西科学 |
46 | High-Ef.ciency、 Electrophosphorescent Polymers with Porphyrin–Platinum Complexes in the Conjugated Backbone: Synthesis and Device Performance | 2006-03-14 | Journal of Polymer Science: Part A: Polymer Chemistry |
47 | High-efficiency saturated red bilayer light-emitting diodes | 2006-03-14 | Chin. Phys. Lett |
48 | 聚合物双层结构实现稳定的白光发射 | 2006-03-14 | 华南师范大学学报A |
49 | 含有烷基侧链的杂环芴基共聚物的光电性能 | 2006-03-14 | 发光学报 |
50 | 基于LED应用的分布布拉格反射器研究进展 | 2006-03-14 | 激光与光电子学进展 |
51 | 温度对SiO2光子晶体模板中生长InP的影响 | 2006-03-14 | 量子电子学报 |
52 | 光子晶体的发展及制备研究 | 2006-03-14 | 华南师范大学学报A |
53 | 基于硅波导的喇曼光放大器 | 2006-03-14 | 发光学报 |
54 | AlGaInN四元系氮化物分离研究 | 2006-03-14 | 量子电子学报 |
55 | 化学沉淀法和溶胶－凝胶法制备纳米二氧化钛及其抗菌性的研究 | 2006-03-14 | 华南师范大学学报A |
56 | 功率型白光LED的热特性研究 | 2006-03-14 | 光电子·激光 |
57 | MEH-PPV多层结构器件的制备及其谱红移和窄化 | 2006-03-14 | 光电子·激光 |
58 | 入射角对Al0.5Ga0.5As-AlAs分布布拉格反射器反射光谱的影响 | 2006-03-14 | 光学学报 |
59 | 传感器的误差补偿技术 | 2006-03-14 | 传感技术学报 |
60 | 基于霍耳效应的半导体外延片电参数测试 | 2006-03-14 | 传感器技术 |
61 | 一种实用的仪表自动量限转换电路 | 2006-03-14 | 电测与仪表 |
62 | MOCVD生长GaN的表面形貌及缺陷研究 | 2006-03-14 | 华南师范大学学报 |
63 | 退火对p型GaP和p型AlGaInP载流子浓度的影响 | 2006-03-14 | 华南师范大学学报 |
64 | 发光二极管在物理教学中的应用 | 2006-03-14 | 中国教育理论杂志 |
65 | 退火对AlGaInP/GaInP多量子阱LED外延片性能的影响 | 2006-03-14 | 发光学报 |
66 | Si掺杂对AlGaInP/GaInP多量子阱性能的影响 | 2006-03-14 | 发光学报 |
67 | 磁传感器的非线性误差修正技术 | 2006-03-14 | 传感器技术 |
68 | 激光美容仪温度探测报警系统研究 | 2006-03-14 | 激光杂志 |
69 | 基于软硬件保护的锂离子蓄电池安全控制电路 | 2007-03-14 | 华南师范大学学报 |
70 | In1-xGaxN/Si异质结太阳能电池的光伏特性研究 | 2007-03-14 | 西南科技大学学报 |
71 | 入射介质对GaN基分布布拉格反射器的反射谱影响 | 2007-03-14 | 量子电子学报 |
72 | InN 材料及器件的最新研究进展 | 2007-03-14 | 材料导报 |
73 | 氮化衬底对MOCVD生长GaN的影响 | 2007-03-14 | 华南师范大学学报（自然科学版） |
74 | 硅波导受激喇曼散射放大信号光的数值模拟 | 2007-03-14 | 光子学报 |
75 | 新型硅激光器系统的优化设计 | 2007-03-14 | 激光与红外 |
76 | 日本高校多媒体计算机网络实验室建设与启示 | 2007-03-14 | 现代教育技术 |
77 | BexZn1-x O 合金和 Mg 掺杂BexZn1-x O合金特性的理论研究 | 2007-03-14 | 功能材料 |
78 | 温度对Al0.5Ga0.5As/AlAs分布布喇格反射器的反射谱影响 | 2007-03-14 | 光子学报 |
79 | The influence of growth mode on quality of GaN films and blue LED wafers grown by MOCVD | 2007-03-14 | Physica B |
80 | Theoretical study of BexZn1-xO alloys | 2007-03-14 | Physica B |
81 | Mg、Zn掺杂AlN 电子结构的第一原理计算 | 2007-03-14 | 物理化学学报 |
82 | Effect of Si doping on the photoluminescence properties of AlGaInP/GaInP multiple quantum wells | 2007-03-14 | Microelectronics Journal |
83 | 氮化铟p型掺杂的第一性原理研究 | 2007-03-14 | 物理学报 |
84 | InGaN太阳能电池材料电学与光学性质的辐射研究 | 2008-03-14 | 山东大学学报(工学版) |
85 | 中日高校多媒体网络数字语音室的比较研究 | 2008-03-14 | 实验技术与管理 |
86 | 界面介质层对GaN基LED漏电流的影响， | 2008-03-14 | 量子电子学报， |
87 | GaN材料中间带的电学性质分析 | 2008-03-14 | 华南师范大学学报（自然科学版； |
88 | 渐变方式对量子阱激光器电流注入效率影响的研究 | 2008-03-14 | 华南师范大学报（自然科学版； |
89 | P型GaMnAs／AlGaAs量子阱红外探测器研究 | 2008-03-14 | 激光与红外 |
90 | Co和Mn共掺杂ZnO铁磁性的第一性原理 | 2008-03-14 | 发光学报 |
| 91 | Study of the influence of photon recycling on extraction efficiency in a slab Light Emitting Diode | 2008-03-14 | Proceedings of SPIE, |
| 92 | GaN半导体材料的电学性质与光学性质分析, . | 2008-03-14 | 太阳能学报 |
| 93 | Co和Mn共掺杂ZnO电子结构和光学性质的第一性原理研究 | 2008-03-14 | 物理学报 |
| 94 | The characterization and properties of InN grown by MOCVD, | 2008-03-14 | European Physics Journal-Applied Physics |
| 95 | Mn 掺杂GaN 电子结构和光学性质研究 | 2008-03-14 | 物理学报 |
| 96 | Mn掺杂 ZnO 光学特性的第一性原理计算 | 2008-03-14 | 物理学报， |
| 97 | N 掺杂p-型ZnO 的第一性原理计算 | 2008-03-14 | 物理化学学报 |
| 98 | In-N 共掺杂ZnO第一性原理计算 | 2008-03-14 | 物理学报 |
| 99 | Comparison of Gain Properties with Electron-Electron and Electron-LO-Phonon Interactions in Quantum Cascade Struture | 2008-03-14 | Chinese Physics Letters |
| 100 | The influence of thermal annealing to the characteristics of AlGaInP/GaInP multiple quantum wells LED wafers | 2008-03-14 | Microelectronics Journal, |
| 101 | The influence of undoped GaN surface flatness on the properties of the blue light-emitting diode wafer | 2008-03-14 | Semiconductor Science and Technology， |
| 102 | Influence of growth rate in the early stage of high temperature GaN layer growth on quality of GaN films | 2008-03-14 | J. Crystal growth |
| 103 | CdO及CdxZn1-xO化合物的结构、能量和电子性能分析 | 2008-07-01 | 物理化学学报SCI |
| 104 | Electronic and magnetic properties of p, n type dopant and Mn co-doped GaN | 2009-03-14 | ACTA PHYSICA SINICA |
| 105 | First principle study of Mg, Si and Mn co-doped GaN | 2009-03-14 | ACTA PHYSICA SINICA |
| 106 | Al 组分对Al GaN/GaN量子级联激光器性能的影响 | 2009-03-14 | 发光学报 |
| 107 | GaN基三阱量子级联激光器结构的垒层Al组分分析 | 2009-03-14 | 华南师范大学学报（自然科学版） |
| 108 | GaN基LED溢出电流的模拟 | 2009-03-14 | 光子学报 |
| 109 | Improved optical performance of GaN grown on pattered sapphire substrate | 2009-03-14 | Journal of Semiconductors |
| 110 | Li、N共掺杂实现P 型ZnO 的机理探讨 | 2009-03-14 | 材料科学与工程学报 |
| 111 | High-efficiency red polymer light-emitting diodes based on optimizing blend polymer host | 2009-03-14 | SYNTHETIC METALS |
| 112 | Efficient White Light Emission Using a Single Copolymer with Red and Green Chromophores on a Conjugated Polyfluorene Backbone Hybridized with InGaN-Based Light-Emitting Diodes | 2009-03-14 | CHINESE PHYSICS LETTERS |
| 113 | Influence of a p-InGaN/GaN short-period superlattice on the performance of GaN-based light-emitting diodes | 2009-03-14 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
| 114 | GaP single crystal layers grown on GaN by MOCVD | 2009-03-14 | Proc. of SPIE |
| 115 | High efficiency phosphorescence light-emitting diodes with conjugated polymer host | 2009-03-14 | ACTA PHYSICA SINICA |
| 116 | Ferromagnetism and the optical properties of Cu-doped AIN from first-principles study | 2009-03-14 | ACTA PHYSICA SINICA |
| 117 | Electronic structure and the optical properties of GaN (0001) surface from first-principles study | 2009-03-14 | Proceedings of SPIE |
| 118 | Numerical modeling of thermionic electrons in abrupt isotype heterojunction for the light emitting transistor | 2009-03-14 | Proceedings of SPIE |
| 119 | AlN Based Diluted Magnetic Semiconductors from First-principles Study | 2009-03-14 | Photonics and Optoelectronics Meetings |
| 120 | 产学研相结合建设LED研发实验室 | 2009-03-14 | 实验技术与管理 |
| 121 | MG，CD掺杂AIN电子结构的第一性原理计算 | 2009-03-14 | 华南师范大学学报（自然科学版） |
| 122 | 自发辐射对量子级联激光器发光噪声的影响 | 2009-03-14 | 发光学报 |
| 123 | 量子级联探测器研究进展 | 2009-03-14 | 激光与光电子学进展 |
| 124 | 掺杂GaN的湿法刻蚀研究 | 2009-03-14 | 微纳电子技术 |
| 125 | Zn,Cd掺杂AlN电子结构的第一性原理计算 | 2009-03-14 | 发光学报 |
| 126 | Localized surface plasmons, surface plasmon polaritons, and their coupling in 2D metallic array for SERS | 2010-02-01 | Optics Express, v 18, n 3, p 1959-1965, February 1, 2010 |
| 127 | Localized surface plasmons, surface plasmon polaritons, and their coupling in 2D metallic array for SERS | 2010-02-01 | Optics Express, v 18, n 3, p 1959-1965, February 1, 2010 |
| 128 | Structures and thermodynamic properties of ZnSe | 2010-03-01 | Gongneng Cailiao/Journal of Functional Materials, v 41, n 3, p 481-483+487, March 2010 |
| 129 | Structures and thermodynamic properties of ZnSe | 2010-03-01 | Gongneng Cailiao/Journal of Functional Materials, v 41, n 3, p 481-483+487, March 2010 |
| 130 | A study of the relations between lossless and lossy cases | 2010-06-07 | Optics Express, v 18, n 12, p 12213-12225, June 7, 2010 |
| 131 | A study of the relations between lossless and lossy cases | 2010-06-07 | Optics Express, v 18, n 12, p 12213-12225, June 7, 2010 |
| 132 | Study on enhancing the light output of GaN-based LED by using Ni nanoparticle mask | 2010-07-01 | Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 21, n 7, p 966-969, July 2010 |
| 133 | Influence of annealing temperature on properties of tantalum-doped indium tin oxide films | 2010-07-01 | Cailiao Rechuli Xuebao/Transactions of Materials and Heat Treatment, v 31, n 7, p 25-29, July 2010 |
| 134 | Study on enhancing the light output of GaN-based LED by using Ni nanoparticle mask | 2010-07-01 | Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 21, n 7, p 966-969, July 2010 |
| 135 | Influence of annealing temperature on properties of tantalum-doped indium tin oxide films | 2010-07-01 | Cailiao Rechuli Xuebao/Transactions of Materials and Heat Treatment, v 31, n 7, p 25-29, July 2010 |
| 136 | Si图形衬底的制备及半极性GaN生长 | 2010-08-01 | 华南师范大学学报 |
| 137 | First-principles of wurtzite ZnO (0001) and (0001) surface structures | 2010-08-01 | Journal of Semiconductors, v 31, n 8, August 2010 |
| 138 | GaP:Mg layers grown on GaN by MOCVD | 2010-08-01 | Journal of Crystal Growth |
| 139 | Light Emission from Nanoscale Si/Si Oxide Materials | 2010-08-01 | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY |
| 140 | Optical properties of GaMnN films grown by metal-organic chemical vapor deposition | 2010-08-01 | ACTA PHYSICA SINICA |
| 141 | Theoretical analysis on the improvement of p-type ZnO by B-N codoping | 2010-08-01 | ACTA PHYSICA SINICA |
| 142 | Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes | 2010-08-01 | CHINESE PHYSICS B |
| 143 | Theoretical study of Fe-doped p-type ZnO | 2010-08-01 | APPLIED PHYSICS LETTERS |
| 144 | Study of the electronic structure and the properties of p-type doping in Cd : O codoped AIN | 2010-08-01 | ACTA PHYSICA SINICA |
| 145 | Proposal of a polarization-insensitive echelle grating demultiplexer based on a nanophotonic silicon-on-insulator platform through a dual-grating system | 2010-08-01 | OPTICS LETTERS |
| 146 | First-principles calculations of ZnO polar surfaces and N adsorption mechanism | 2010-08-01 | ACTA PHYSICA SINICA |
| 147 | Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching | 2010-08-01 | CHINESE PHYSICS B |
| 148 | The influence of the Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (111) substrate | 2010-08-01 | JOURNAL OF CRYSTAL GROWTH |
| 149 | Gain-assisted propagation of surface plasmon polaritons via electrically pumped quantum wells | 2010-08-01 | OPTICS LETTERS |
| 150 | GaP layers grown on GaN with and without buffer layers | 2010-08-01 | CHINESE PHYSICS B |
| 151 | A pentacene field-effect transistor with light-programmable threshold voltage | 2010-08-01 | ORGANIC ELECTRONICS |
| 152 | Effect of methanol treatment on performance of phosphorescent dye doped polymer light-emitting diodes | 2010-08-01 | SYNTHETIC METALS |
| 153 | Surface plasmon interference on the surface of an aluminum-covered fiber core array for solgel fabrication of submicrometer gratings | 2010-08-01 | OPTICS LETTERS |
| 154 | First-principles of wurtzite ZnO (0001) and (0001) surface structures | 2010-08-01 | Journal of Semiconductors, v 31, n 8, August 2010 |
| 155 | Spontaneous and stimulated emission ofZnO/Zn0.85Mg0.15Oasymmetric double quantum wells | 2010-09-08 | SUPERLATTICE MICROST |
| 156 | • Analysis of wetting layer effect on electronic structures of truncated-pyramid quantum dots | 2010-12-06 | 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics |
| 157 | A novel design of triplexer based on Bragg grating assisted MMI coupler | 2010-12-06 | Advances in Opto-electronics and Micro/nano-optics |
| 158 | Coupled resonator-induced transparency in ring-bus-ring Mach-Zehnder interferometer | 2011-01-01 | JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS |
| 159 | Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED | 2011-01-01 | ACTA PHYS SIN-CH ED |
| 160 | Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer | 2011-01-15 | ACTA PHYS SIN-CH ED |
| 161 | Enhancing the performance of polymer light-emitting diode via methanol treatment | 2011-01-20 | Journal of Luminescence |
| 162 | Surface plasmon interference pattern on the surface of a silver-clad planar waveguide as a sub-micron lithography tool | 2011-02-01 | Science China, Physics, Mechanics & Astronomy |
| 163 | Structural, optical and electronic properties of P doped p-type ZnO thin film | 2011-02-03 | PHYSICA B |
| 164 | Analysis of electronic structures of quantum dots using meshless Fourier transform k.p method | 2011-03-15 | JOURNAL OF APPLIED PHYSICS |
| 165 | Comparison of nitride-based dual-wavelength light-emitting diodes with an InAlN electron-blocking layer and with p-type doped barriers | 2011-04-01 | Chinese Physics B |
| 166 | Ultrathin nickel oxide film as a hole buffer layer to enhance the optoelectronic performance of a polymer light-emitting diode | 2011-04-15 | Optics Letters |
| 167 | 不同产地石菖蒲的挥发性成分研究 | 2011-04-28 | 分析测试学报 |
| 168 | 基于正交实验法的高亮度大功率LED仿真设计 | 2011-06-01 | 光电技术应用 |
| 169 | 图形衬底参数对LED发光效率的影响 | 2011-06-08 | 光学学报（EI) |
| 170 | ZnO(0001) 表面吸附B 的电子结构和光学性质研究 | 2011-06-08 | 物理学报 |
| 171 | Cu吸GaN（０００１）表面的第一性原理计算 | 2011-06-08 | 光学学报 |
| 172 | P型ZNO纳米线及其表面H钝化的理论分析 | 2011-06-08 | 光学学报 |
| 173 | P型ZnO纳米线及其表面犎钝化的理论分析 | 2011-06-08 | 光学学报 |
| 174 | Cu吸附GaN（０００１）表面的第一性原理计算 | 2011-06-08 | 光学学报 |
| 175 | The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron | 2011-06-30 | CHINESE PHYS B |
| 176 | Theoretical study of the effect of changes in the number of quantum wells of dual-wavelength LED | 2011-07-01 | ACTA PHYS SIN-CH ED |
| 177 | Fabrication of ZnO nanowall-network ultraviolet photodetector on Si substrates | 2011-07-12 | 半导体学报 |
| 178 | 衬底温度对ZnO薄膜的结构和光学特性的影响 | 2011-07-18 | 发光学报 |
| 179 | Study of GaP single crystal layers grown on GaN by MOCVD | 2011-07-20 | MATER RES BULL |
| 180 | Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer | 2011-09-15 | Appl. Phys. Lett |
| 181 | LED原材料专利信息分析与研究 | 2011-12-01 | 照明工程学报 |
| 182 | Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers | 2012-01-02 | OPTICS EXPRESS |
| 183 | Temporal coupled-mode theory of ring-bus-ring Mach-Zehnder interferometer | 2012-01-27 | Optical Society of America |
| 184 | Na,N双受主共掺杂P型ZnO第一原理研究 | 2012-01-30 | 功能材料 |
| 185 | 反对称n-AlGaN层对GaN基双蓝光波长发光二极管性能的影响 | 2012-02-02 | ACTA PHYS SIN-CH ED |
| 186 | The influence of A1GaN/GaN superlattices as electron blocking layers on the performance of blue InGaN light-emitting diodes | 2012-03-01 | CHINESE PHYS B |
| 187 | 退火温度对ZnO掺杂ITO薄膜性能的影响 | 2012-03-02 | 光电子.激光 |
| 188 | Elimination of spurious solutions from k·p theory with Fourier transform technique and Burt-Foreman operator ordering | 2012-03-05 | JOURNAL OF APPLIED PHYSICS |
| 189 | First-principles study of magnetic properties in V-doped GaN | 2012-03-09 | CHEM PHYS LETT |
| 190 | Annealing effect on the bipolar resistive switching behaviors of BiFeO3 thin films | 2012-03-21 | J ALLOY COMPD |
| 191 | 选择性p 型量子阱垒层掺杂在双波长发光二极管光谱调控中的作用 | 2012-04-01 | ACTA PHYS SIN-CH ED |
| 192 | Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer | 2012-04-03 | APPL PHYS LETT |
| 193 | Comparative investigation of unipolar resistance switching effect | 2012-04-25 | APPL PHYS A-MATER |
| 194 | Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers | 2012-04-26 | CHINESE PHYS B |
| 195 | Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers | 2012-05-01 | CHINESE PHYS B |
| 196 | Improved color rendering of phosphor-converted white light-emitting diodes with dual-blue layers and n-type AlGsaN layer | 2012-05-01 | OPT LETT |
| 197 | Analysis of an ultra-compact wavelength filter based on hybrid plasmonic waveguide structure | 2012-05-15 | OPT LETT |
| 198 | Optical and photoluminescence properties of BiFeO3 thin films grown on ITO | 2012-05-17 | PHYS STATUS SOLIDI A |
| 199 | High-efficiency conjugated-polymer-hosted blue phosphorescent | 2012-05-31 | CHINESE SCI BULL |
| 200 | Investigation of GaN-based dual-wavelength light-emitting diodes with p-type barriers and vertically stacked quantum wells | 2012-06-01 | CHIN OPT LETT |
| 201 | Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer | 2012-06-08 | IEEE PHOTONIC TECH L |
| 202 | The preparation and performance analysis of GaN-based high-voltage DC light emitting diode | 2012-07-01 | ACTA PHYS SIN-CH ED |
| 203 | LED 路灯专利信息分析与研究 | 2012-07-01 | 科技管理研究 |
| 204 | Advantage of dual wavelength light-emitting diodes with dip-shaped quantum wells | 2012-07-01 | CHINESE SCI BULL |
| 205 | Numerical study of spectrum-control in dual-wavelength LED with doped quantum well barriers of different doping concentration | 2012-07-01 | ACTA PHYS SIN-CH ED |
| 206 | First-principles analysis on V-doped GaN | 2012-07-01 | OPT MATER |
| 207 | Performance enhancement of near-UV light-emitting diodes with an InAlN/GaN superlattice electron-blocking layer | 2012-07-11 | IEEE ELECTR DEVICE L |
| 208 | 六方系InAlGaN晶体的长波长光学声子研究 | 2012-08-01 | 发光学报 |
| 209 | FERROMAGNETIC PROPERTIES IN V-DOPED AlN FROM FIRST PRINCIPLES | 2012-08-10 | MOD PHYS LETT B |
| 210 | Study on Long-wavelength Optical Phonons in Hexagonal InAlGaN Crystals | 2012-08-15 | 发光学报 |
| 211 | 第一性原理研究Te-N共掺P型ZnO | 2012-09-01 | ACTA PHYS SIN-CH ED |
| 212 | In assisted realization of p-type C-doped ZnO: A first-principles study | 2012-09-01 | PHYSICA B |
| 213 | Improved efficiency droop in a GaN-based light-emitting diode with an AlInN electron-blocking layer | 2012-09-01 | CHINESE PHYS LETT |
| 214 | Correction to Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer | 2012-09-07 | IEEE ELECTR DEVICE L |
| 215 | First-principles prediction of a new class of photovoltaic materials: I-III-IV2-V4 phosphides | 2012-09-10 | J APPL PHYS |
| 216 | 纤锌矿BeO掺Cd的电子结构与能带特性研究 | 2012-09-10 | ACTA PHYS SIN-CH ED |
| 217 | Electrical and Optical Properties of p-Type Li,Cu-Codoped NiO thin film | 2012-09-11 | J ELECTRON MATER |
| 218 | Improvement of Efficiency Droop in Blue InGaN Light-Emitting Diodes With p-InGaN/GaN Superlattice Last Quantum Barrier | 2012-11-01 | IEEE PHOTONICS TECHNOLOGY LETTERS |
| 219 | Theoretical study of luminance of GaN quantum dots planted in quantum well | 2012-11-01 | ACTA PHYS SIN-CH ED |
| 220 | 白豆蔻、红豆蔻、草豆蔻和肉豆蔻挥发油成分的比较 | 2012-11-02 | 应用化学 |
| 221 | Micro patterning replication of planar optical elements on silicone LED encapsulant film using imprinting technique | 2012-11-07 | ACP |
| 222 | Study of an SPP mode with gain medium based on a hybrid plasmonic structure | 2012-11-07 | Communications and Photonics Conference (ACP), 2012 Asia |
| 223 | Synthesis and photovoltaic properties of dithienosilole-based copolymers | 2012-11-11 | J Mater Sci: Mater Electron |
| 224 | Droop improvement in blue InGaN light emitting diodes with AlGaN/InGaN superlattice barriers | 2012-11-12 | ACP Technical Digest © 2012 OSA |
| 225 | Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers | 2012-11-12 | CHINESE PHYS B |
| 226 | Be和Ca掺杂纤锌矿ZnO的晶格常数与能带特性研究 | 2012-11-15 | ACTA PHYS SIN-CH ED |
| 227 | 量子阱数量变化对InGaN/AlGaN LED的影响 | 2012-12-01 | Chinese Journal of Luminescence |
| 228 | Simulation of the Advantages in Dual-Wavelength Light-Emitting Diodes by Changing the Last Two GaN Barriers into InGaN Barriers | 2012-12-01 | ICECC '12 Proceedings of the 2012 International Conference on Electronics |
| 229 | 渐变型量子阱垒层厚度对GaN基双波长发光二极管发光特性调控的研究 | 2012-12-01 | ACTA PHYS SIN-CH ED |
| 230 | 红光LED尺寸对ITO电流扩展的影响 | 2012-12-03 | 半导体技术 |
| 231 | Be1-xMgxO合金的能带特性与相结构稳定性的研究 | 2012-12-08 | ACTA PHYS SIN-CH ED |
| 232 | Investigation of GaN-based light-emitting diodes using a p-GaN/i-InGaN short-period superlattice structure as last quantum barrier | 2013-01-01 | Sci China Tech Sci |
| 233 | High Internal Quantum Efficiency Blue Light-emitting Diodes with Triangular Shaped InGaN/GaN Multiple Quantum Wells | 2013-01-01 | chinese journal of luminescence |
| 234 | A novel hybrid plasmonic waveguide with loss compensation via electrically pumped gain medium based on silicon platform | 2013-01-15 | optics communications |
| 235 | Luminescent Properties of New MgAl2O4／Ce：YAG transparent ceramics for white led applications | 2013-02-01 | CHINESE JOURNAL OF LUMINESCENCE |
| 236 | A novel all-optical logic gate device based on a hybrid plasmonic waveguide on silicon-on-insulator chip | 2013-02-01 | NANOSCI NANOTECH LET |
| 237 | Electrical bistabilities of write-once-read-many-times memory devices fabricated utilizing indium tin oxide nanoparticles embedded in a poly 4-vinyl phenol layer | 2013-02-01 | NANOSCI NANOTECH LET |
| 238 | A hybrid plasmonic multimode interference splitter based on metal-gap-silicon waveguides | 2013-02-01 | NANOSCI NANOTECH LET |
| 239 | Thermal conductivity of Cu/diamond composites by orthogonal experiment method | 2013-02-01 | Diamond ＆ Abrasives Engineering |
| 240 | First-principles study on the energy bandgap bowing parameter of wurtzite BexZn1-xO | 2013-02-05 | ACTA PHYS SIN-CH ED |
| 241 | A dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells | 2013-02-10 | CHINESE PHYS B |
| 242 | 湿法腐蚀GaP对LED性能的影响 | 2013-02-13 | 半导体技术 |
| 243 | Performance Improvement of Blue InGaN Light鄄emitting | 2013-03-01 | 发光学报 |
| 244 | 表面等离激元的操控: 原理与研究进展 | 2013-03-13 | 华南师范大学学报 ( 自然科学版) |
| 245 | Enhanced performance of InGaN/GaN based solar cells with an In0.05Ga0.95N ultra-thin inserting layer between GaN barrier and In0.2Ga0.8N well | 2013-03-30 | OPT EXPRESS |
| 246 | Journal of Magnetism and Magnetic Materials | 2013-04-01 | Journal of Magnetism and Magnetic Materials |
| 247 | Effect of polarization-matched n-type AlGaInN electron-blocking layer on the optoelectronic properties of blue InGaN light-emitting diodes | 2013-04-01 | J DISP TECHNOL |
| 248 | Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer 2 | 2013-04-09 | Chin. Phys. B |
| 249 | Performance enhancement of InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer | 2013-04-09 | CHINESE PHYS B |
| 250 | Structure Optimization of Multiple Quantum Wells in Near Ultraviolet Light Emitting Diodes with 380 nm Wavelength | 2013-05-01 | CHINESE JOURNAL OF LUMINESCENCE |
| 251 | Preparation and Optical Properties of MgAl2 O4／Ce：YAG Transparent Ceramic | 2013-05-01 | SPECTROSC SPECT ANAL |
| 252 | A GaN-based LED with perpendicular structure fabricated on a ZnO substrate by MOCVD | 2013-05-01 | J DISP TECHNOL |
| 253 | Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers | 2013-05-25 | CHINESE PHYS B |
| 254 | respeonse characteristic of blue light-emitting diodes | 2013-06-01 | acta optica sinca |
| 255 | Proposal of a wavelength filter with a cut corner based on Equilateral-Triangle-Resonator | 2013-06-01 | OPT EXPRESS |
| 256 | Modeling of Vertical GaN Based Resonant Cavity Light-Emitting Diode | 2013-06-26 | 2013 International Conference on Mechatronic System and Materials Application,ICMSMA |
| 257 | Optimized design and performance research of the High-voltage LEDs chipset | 2013-06-27 | 2013 International Conference on Mechatronic System and Materials Application,ICMSMA |
| 258 | Focusing and demultiplexing of an in-plane hybrid plasmonic mode based on the planar concave grating | 2013-07-01 | OPT COMMUN |
| 259 | Efficiency enhancement of InGaN light-emitting diode with p-AlGaN/GaN superlattice last quantum barrier | 2013-07-12 | CHINESE PHYS B |
| 260 | Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content | 2013-07-30 | CHINESE PHYS B |
| 261 | Advantages of GaN based light-emitting diodes with p-AlGaN/InGaN superlattice last quantum barrier | 2013-08-16 | OPT COMMUN |
| 262 | Investigation of blue InGaN light-emitting diodes with p-AlGaN/InGaN superlattice interlayer | 2013-08-23 | APPL PHYS A-MATER |
| 263 | Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer | 2013-08-25 | CHINESE PHYS B |
| 264 | Performance enhancement of blue InGaN light-emitting diodes with InGaN barriers and dip-shaped last barrier | 2013-09-01 | IEEE T ELECTRON DEV |
| 265 | 2D pillar-chained lanthanide(III)-copper(I) metal-organic frameworks based on isonicotinate and in situ generated oxalate 2 | 2013-09-08 | Inorganic Chemistry Communications |
| 266 | Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer | 2013-09-09 | CHINESE PHYS B |
| 267 | Low-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structure | 2013-09-17 | Applied Physics Letters |
| 268 | Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells | 2013-09-30 | CHINESE PHYS B |
| 269 | Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers | 2013-09-30 | CHINESE PHYS B |
| 270 | InGaN-Based Blue Light Emitting Diodes with AlInN-GaN-AlInN Electron Blocking Layers | 2013-09-30 | CHINESE PHYS LETT |
| 271 | Influence of Si doping on the structural and optical properties of InGaN epilayers | 2013-10-01 | CHINESE PHYS B |
| 272 | Effect of InxGa1-xN "continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition | 2013-10-01 | CHINESE PHYS B |
| 273 | Fabrication of GaN-based LEDs with 22 degrees undercut sidewalls by inductively coupled plasma reactive ion etching | 2013-10-01 | CHINESE PHYS B |
| 274 | Analysis on Patent Information of MOCVD Equipment in LED Industry | 2013-10-01 | ZHAOMING GONGCHENG XUEBAO |
| 275 | Investigation of blue InGaN light-emitting diodes with AlGaN barriers of the increasing Al composition | 2013-10-04 | J APPL PHYS |
| 276 | Transient Analysis of InGaN/GaN Light-emitting Diode with Varied Quantum Well Number | 2013-10-13 | 发光学报 |
| 277 | 三明治结构电子阻挡层中势阱深度对LED性能的影响 | 2013-10-16 | CHINESE JOURNAL OF LUMINESCENCE |
| 278 | Local Doping Modulation for Improving Quantum Efficiency in GaN-Based Light-Emitting Diodes | 2013-10-22 | JPN J APPL PHYS |
| 279 | Preparation of MgAl2O4/Ce:YAG Transparent Ceramics by Hot-pressed Sintering and Its Microstructure | 2013-11-01 | RARE METAL MATERIALS AND ENGINEERING |
| 280 | The spectrum-control of dual-wavelength LED with quantum dots planted in quantum wells | 2013-11-01 | ACTA PHYS SIN-CH ED |
| 281 | preparation and luminescent properties of PC/YAG:Ce fluorescent resin | 2013-11-01 | chinese journal of luminescence |
| 282 | Advantages of blue InGaN light-emitting diodes without an electron-blocking layer by using AlGaN step-like barriers | 2013-11-05 | APPL PHYS A-MATER |
| 283 | Preparation and Luminescent Properties of Light Scattering Fluorescent Resin | 2013-12-01 | SPECTROSC SPECT ANAL |
| 284 | Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer | 2013-12-10 | CHINESE PHYS B |
| 285 | Exploring the binding of 4-thiothymidine with Human Serum Albumin by spectroscopy, atomic force microscopy and molecular modeling methods | 2014-01-20 | Carbohydrate Research |
| 286 | Mode conversion in asymmetric dielectric/metal/dielectric plasmonic waveguide using grating coupler | 2014-01-22 | Optics Communications |
| 287 | Stabilizing resistive switching performances of TiN/MgZnO/ZnO/Pt heterostructure memory devices by programming the proper compliance current | 2014-01-31 | APPL PHYS LETT |
| 288 | Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection | 2014-02-01 | Chinese Physics B |
| 289 | Advantages of GaN based light-emitting diodes with p-AlGaN/InGaN superlattice last quantum | 2014-02-01 | Optics Communications |
| 290 | Advantages of blue InGaN light-emitting diodes without an electron-blocking layer by using AlGaN step-like | 2014-02-04 | Appl. Phys. A |
| 291 | H2气氛退火处理对Nb掺杂TiO2薄膜光电性能的影响 | 2014-02-14 | 物理学报 |
| 292 | Influence of structure and atom sites on Sn-based anode materials for lithium ion batteries: a first-principle study | 2014-02-22 | Chinese Science Bulletin |
| 293 | W掺杂对β-Ga2O3导电性能影响的理论研究 | 2014-03-05 | 物理学报 |
| 294 | SnS电子结构和光学性质的第一性原理研究 | 2014-03-08 | 华南师范大学学报：自然科学版 |
| 295 | Surface-enhanced Raman spectroscopic analysis of maleic hydrazide adsorbed on gold surface | 2014-03-25 | Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy |
| 296 | A GaN AlGaN InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED | 2014-04-01 | Chin. Phys. B |
| 297 | Performance Enhancement of Blue Light-Emitting Diodes by adjusting the p-Type Doped Last Barrier | 2014-04-04 | APPL PHYS A-MATER |
| 298 | Ga掺杂对纤锌矿TM0.125Zn0.875O(T=Be,Mg)电子结构和光学能隙的影响 | 2014-04-13 | 物理学报 |
| 299 | Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers | 2014-05-01 | Chin. Phys. B |
| 300 | First-principles study of effects of Al doping on electronic structures and optical properties of SnO2 | 2014-05-03 | Materials Research Innovations |
| 301 | Performance enhancement of InGaN light-emitting diodes with a leakage electron recombination quantum well | 2014-05-17 | Appl. Phys. A |
| 302 | Enhanced photovoltaic performance of organic/silicon nanowire hybrid solar cells by solution- evacuated method | 2014-06-01 | optics letters |
| 303 | Performance of Blue LEDs With N-AlGaN/N-GaN Superlattice as Electron-Blocking Layer | 2014-06-01 | IEEE PHOTONICS TECHNOLOGY LETTERS |
| 304 | Electronic structures and energy band properties of Be- and S-doped wurtzite ZnO | 2014-06-01 | Chinese Physics B |
| 305 | Thermo-catalytic decomposition of formaldehyde: a novel approach to produce mesoporous ZnO for enhanced photocatalytic activities | 2014-06-04 | NANOTECHNOLOGY |
| 306 | β-Ga2O3掺Al的电子结构与能带特性研究 | 2014-06-30 | 功能材料 |
| 307 | Improved photoluminescence in InGaN/GaN strained quantum wells | 2014-07-01 | CHINESE PHYS LETT |
| 308 | MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices | 2014-07-01 | CHINESE SCI BULL |
| 309 | Complementary switching on TiN/MgZnO/ZnO/Pt bipolar memory devices for nanocrossbar arrays | 2014-07-05 | J ALLOY COMPD |
| 310 | 基于一种易于制作的混合型表面等离激元波导结构的超紧凑截线滤波器 | 2014-07-15 | 发光学报 |
| 311 | Electronic structures and optical properties of IIIA-doped wurtzite Mg0.25Zn0.75O | 2014-08-01 | Chinese Physics B |
| 312 | Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier | 2014-08-30 | IEEE TRANSACTIONS ON ELECTRON DEVICES |
| 313 | SnO2薄膜与n-SnO2/p-Si 异质结光电特性的研究 | 2014-09-11 | 华南师范大学学报：自然科学版 |
| 314 | Investigation of AlGaN-based deep-ultraviolet light-emitting diodes with composition-varying AlGaN multilayer barriers | 2014-10-24 | Superlattice and Microstructures |
| 315 | Superfine TiO2/SnO2/Carbon Hybrid Nanocomposite with Greatly Enhanced Electrochemical Properties | 2014-11-20 | Electrochimica Acta |
| 316 | 光散射ＰＣ荧光树脂的制备及光学性能 | 2014-12-03 | 光谱学与光谱分析 |
