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科研项目
2
科研成果
2
华南师范大学光电子材料与技术研究所 » 科研动态 » 科研成果 »

 

 

 

1

ZL 200810029426.4

一种金属半导体场效应发光晶体管及其制作方法

2

ZL 200810028918.1

一种垂直栅极结构的发光晶体管及其制备方法

3

ZL 200810028447.4

一种大功率发光晶体管及其制备方法

4

ZL200910193476.0

一种GaNLED芯片结构中P-GaNITO层的表面初化方法

5

ZL 200810220497.2

一种红绿光发射共轭聚合物及其制备方法和应用

6

ZL 201010301343.3

投射式LED汽车远光灯具

7

ZL 200910214541.3

一种B和N共掺杂ZnO薄膜的制备方法

8

ZL 200910036943.9

反光面自散热LED室内照明灯

9

ZL201010229997.x

一种多功能台灯

10

ZL200910214542.8

ZnO基发光二极管及其制备方法

11

ZL201010563394.3

一种GANLED半导体芯片的制备方法

12

ZL201110066973.1

具有肖特基二极管测温的大功率LED

13

ZL201110066983.5

利用pn结测量LED热阻的方法及其装置

14

ZL201110334163.x

用金刚石粉-铜粉复合材料散热的发光二极管照明装置

15

ZL201110228492.6

一种全自动植物光照装置

16

ZL201110334926.0

散热基板为金刚石粉-铜粉复合材料的大功率发光二极管

17

ZL201110393991.0

一种高导热LED封装材料及其制备方法

18

ZL201110334161.0

散热基板为类金刚石膜-铜复合材料的大功率发光二极管

19

ZL201210192287.3

一种应用压印技术制作硅酮微纳光学结构的方法

20

ZL201110334164.4

用类金刚石膜-铜复合材料散热的发光二级管照明装置

21

ZL 201210117670.2

高压直流发光二极管及其制备方法

22

ZL 201210300173.6

一种生长GaNLED的硅图形衬底及其制备方法

23

ZL 201110328387.X

GaN基双蓝光波长发光器件及其制备方法

24

ZL 2013 1 0010522.5

一种用于LED的荧光透明聚碳酸酯光栅的制备方法

25

ZL 2013 1 0010509.X

一种新型荧光玻璃制备方法

 

       

 

部分专利证书和获奖证书        专利产品——半导体点阵光理疗器

 

 

 

 

1

Si图形衬底的制备及半极性GaN生长

 

华南师范大学学报

2

LED正向压降随温度的变化关系的研究

2003-03-14

光子学报(ISSN1004-4213;CN61-1235/04)

3

渐变异质结在HB-LED器件中的应用以及实现技术

2003-03-14

量子电子学报(ISSN1007-5461;CN34-1163/TN)

4

AlGaInP四元系材料双异质结发光二极管的最佳Al组分分析

2003-03-14

量子电子学报(ISSN1007-5461;CN34-1163/TN)

5

AlGaInP四元系材料渐变异质结及其在高亮度发光二极管器件中的应用

2003-03-14

物理学报(ISSN1000-3290;CN11-1958/O4)

6

芯片键合材料对功率型LCD的影响

2003-03-14

半导体光电(CN50-1092/TN)

7

功率型LED热阻测量的新方法

2003-03-14

半导体光电(CN50-1092/TN)

8

现代高新技术与传统管理的磨合

2003-03-14

科技进步与对策(ISSN1001-7348;CN42-1224/G3)

9

MOCVD生长的动力学模式探讨

2003-03-14

华南师范大学学报(ISSN1000-5463;CN44-1138/N)

10

测量仪表的多机通讯

2003-03-14

微计算机信息(ISSN1000-372X;CN14-1128/TP)

11

LED显示屏亮度和颜色的调整方法

2003-03-14

液晶与显示(ISSN1007-2780;CN22-1259)

12

可自动调整的标准磁场源

2003-03-14

计量与测试技术(ISSN1004-6941;CN51-1412/TB)

13

发光二极管照射对腰部理疗作用分析

2003-03-14

激光杂志(ISSN0253-2743;CN50-1085/TN)

14

基于CPLD的计算机接口电路设计技巧

2003-03-14

微计算机信息(ISSN1000-372X;CN14-1128/TP)

15

改进实用型LED生物光源系列

2003-03-14

应用激光(ISSN1000-372X;CN31-1375)

16

用于细胞及组织培养的高强度LED生物光源

2003-03-14

激光生物学报(ISSN1007-7146;CN43-1264/Q)

17

用于细胞及组织培养的低强度LED生物光源

2003-03-14

激光杂志(ISSN0253-5463;CN50-1085/TN)

18

用于细胞及组织培养的中等强度LED生物光源

2003-03-14

光学技术(ISSN1002-1582;CN11-1879/O4)

19

P型掺杂对AlGaInP双异质结发光二极管的Al组分确定的影响

2003-03-14

华南师范大学学报(ISSN1000-5463;CN44-1138/N)

20

GaInP/(AlxGa1-x)InP多量子阱结构的光荧光特性分析

2003-03-14

华南师范大学学报(ISSN1000-5463;CN44-1138/N)

21

流动注射在线共沉淀HG-AFS测定痕量铅

2003-03-14

分析实验室(ISSN1000-0720;CN11-2017/TF)

22

The influence of Si-doping to the characteristics of AlGaInP/GaInP multiple quantum wells

2004-03-14

Physica B

23

Study of the blue luminescence in unintentional doped GaN films grown by MOCVD

2004-03-14

Journal of Luninescence

24

高亮度发光二极管多层结构外延片电化学C-V测试分析

2004-03-14

量子电子学报

25

未掺杂GaN外延膜的结晶特性与蓝带发光关系研究

2004-03-14

量子电子学报

26

InGaN 薄膜的弯曲因子和斯托克斯移动研究

2004-03-14

光学学报

27

自动换量限的数字万用表

2004-03-14

仪器仪表学报

28

first principles study of wurtzite and zinc blende GaN:a comparison of the electronic and optical properties

2005-03-14

Physics Letter A

29

Relationship between structure characteristic and blue luminescence in unintentional doped GaN layers

2005-03-14

Materials Science and Engineering B

30

Preparation of InP-SiO2 3D photonic crystals

2005-03-14

Physica B

31

生长模式控制对MOCVD生长GaN性能的影响

2005-03-14

华南师范大学学报A

32

应变对AlxGa1-xN能带间隙弯曲系数和能带结构的影响

2005-03-14

半导体光电

33

掺Si对AlGaInP/GaInP多量子阱发光性能的影响

2005-03-14

半导体学报

34

人工欧泊填充InP后的形貌和光学特性

2005-03-14

光子学报

35

Si掺杂的AlGaInP/GaInP多量子阱光学特性

2005-03-14

量子电子学报

36

人工蛋白石光子晶体制备技术及改性研究进展

2005-03-14

激光与光电子学进展

37

垒层Si掺杂对AlGaInP/GaInP多量子阱性能的影响

2005-03-14

半导体技术

38

缓冲层用于改善硅基氮化镓外延薄膜质量

2005-03-14

光电子技术与信息

39

量子级联激光器的电路模型分析

2005-03-14

量子电子学报

40

基于对数关系的多量子阱VCSELs阈值特性研究

2005-03-14

光电子技术与信息

41

扫描电镜用于人工蛋白石模板中填充InP的形貌研究

2005-03-14

人工晶体学报

42

垂直沉积法在GaAs衬底上制备有序二氧化硅胶体晶体

2005-03-14

光电子·激光

43

Ⅲ-Ⅴ族混合晶体的长波长光学声子

2005-03-14

量子电子学报

44

AlGaInP/GaAs外延层的倒易空间图分析

2005-03-14

华南师范大学学报

45

芴基荧光共聚物与芴基磷光共聚物光电性能的比较研究

2006-03-14

江西科学

46

High-Ef.ciency、 Electrophosphorescent Polymers with Porphyrin–Platinum Complexes in the Conjugated Backbone: Synthesis and Device Performance

2006-03-14

Journal of Polymer Science: Part A: Polymer Chemistry

47

High-efficiency saturated red bilayer light-emitting diodes

2006-03-14

Chin. Phys. Lett

48

聚合物双层结构实现稳定的白光发射

2006-03-14

华南师范大学学报A

49

含有烷基侧链的杂环芴基共聚物的光电性能

2006-03-14

发光学报

50

基于LED应用的分布布拉格反射器研究进展

2006-03-14

激光与光电子学进展

51

温度对SiO2光子晶体模板中生长InP的影响

2006-03-14

量子电子学报

52

光子晶体的发展及制备研究

2006-03-14

华南师范大学学报A

53

基于硅波导的喇曼光放大器

2006-03-14

发光学报

54

AlGaInN四元系氮化物分离研究

2006-03-14

量子电子学报

55

化学沉淀法和溶胶-凝胶法制备纳米二氧化钛及其抗菌性的研究

2006-03-14

华南师范大学学报A

56

功率型白光LED的热特性研究

2006-03-14

光电子·激光

57

MEH-PPV多层结构器件的制备及其谱红移和窄化

2006-03-14

光电子·激光

58

入射角对Al0.5Ga0.5As-AlAs分布布拉格反射器反射光谱的影响

2006-03-14

光学学报

59

传感器的误差补偿技术

2006-03-14

传感技术学报

60

基于霍耳效应的半导体外延片电参数测试

2006-03-14

传感器技术

61

一种实用的仪表自动量限转换电路

2006-03-14

电测与仪表

62

MOCVD生长GaN的表面形貌及缺陷研究

2006-03-14

华南师范大学学报

63

退火对p型GaP和p型AlGaInP载流子浓度的影响

2006-03-14

华南师范大学学报

64

发光二极管在物理教学中的应用

2006-03-14

中国教育理论杂志

65

退火对AlGaInP/GaInP多量子阱LED外延片性能的影响

2006-03-14

发光学报

66

Si掺杂对AlGaInP/GaInP多量子阱性能的影响

2006-03-14

发光学报

67

磁传感器的非线性误差修正技术

2006-03-14

传感器技术

68

激光美容仪温度探测报警系统研究

2006-03-14

激光杂志

69

基于软硬件保护的锂离子蓄电池安全控制电路

2007-03-14

华南师范大学学报

70

In1-xGaxN/Si异质结太阳能电池的光伏特性研究

2007-03-14

西南科技大学学报

71

入射介质对GaN基分布布拉格反射器的反射谱影响

2007-03-14

量子电子学报

72

InN 材料及器件的最新研究进展

2007-03-14

材料导报

73

氮化衬底对MOCVD生长GaN的影响

2007-03-14

华南师范大学学报(自然科学版)

74

硅波导受激喇曼散射放大信号光的数值模拟

2007-03-14

光子学报

75

新型硅激光器系统的优化设计

2007-03-14

激光与红外

76

日本高校多媒体计算机网络实验室建设与启示

2007-03-14

现代教育技术

77

BexZn1-x O 合金和 Mg 掺杂BexZn1-x O合金特性的理论研究

2007-03-14

功能材料

78

温度对Al0.5Ga0.5As/AlAs分布布喇格反射器的反射谱影响

2007-03-14

光子学报

79

The influence of growth mode on quality of GaN films and blue LED wafers grown by MOCVD

2007-03-14

Physica B

80

Theoretical study of BexZn1-xO alloys

2007-03-14

Physica B

81

Mg、Zn掺杂AlN 电子结构的第一原理计算

2007-03-14

物理化学学报

82

Effect of Si doping on the photoluminescence properties of AlGaInP/GaInP multiple quantum wells

2007-03-14

Microelectronics Journal

83

氮化铟p型掺杂的第一性原理研究

2007-03-14

物理学报

84

InGaN太阳能电池材料电学与光学性质的辐射研究

2008-03-14

山东大学学报(工学版)

85

中日高校多媒体网络数字语音室的比较研究

2008-03-14

实验技术与管理

86

界面介质层对GaN基LED漏电流的影响,

2008-03-14

量子电子学报,

87

GaN材料中间带的电学性质分析

2008-03-14

华南师范大学学报(自然科学版;

88

渐变方式对量子阱激光器电流注入效率影响的研究

2008-03-14

华南师范大学报(自然科学版;

89

P型GaMnAs/AlGaAs量子阱红外探测器研究

2008-03-14

激光与红外

90

Co和Mn共掺杂ZnO铁磁性的第一性原理

2008-03-14

发光学报
91Study of the influence of photon recycling on extraction efficiency in a slab Light Emitting Diode2008-03-14Proceedings of SPIE,
92GaN半导体材料的电学性质与光学性质分析,  .2008-03-14太阳能学报
93Co和Mn共掺杂ZnO电子结构和光学性质的第一性原理研究2008-03-14物理学报
94The characterization and properties of InN grown by MOCVD,2008-03-14European Physics Journal-Applied Physics
95Mn 掺杂GaN 电子结构和光学性质研究2008-03-14物理学报
96Mn掺杂 ZnO 光学特性的第一性原理计算2008-03-14物理学报,
97N 掺杂p-型ZnO 的第一性原理计算2008-03-14物理化学学报
98In-N 共掺杂ZnO第一性原理计算2008-03-14物理学报
99Comparison of Gain Properties with Electron-Electron and Electron-LO-Phonon Interactions in Quantum Cascade Struture2008-03-14Chinese Physics Letters
100The influence of thermal annealing to the characteristics of AlGaInP/GaInP multiple quantum wells LED wafers2008-03-14Microelectronics Journal,
101The influence of undoped GaN surface flatness on the properties of the blue light-emitting diode wafer2008-03-14Semiconductor Science and Technology,
102Influence of growth rate in the early stage of high temperature GaN layer growth on quality of GaN films2008-03-14J. Crystal growth
103CdO及CdxZn1-xO化合物的结构、能量和电子性能分析2008-07-01物理化学学报SCI
104Electronic and magnetic properties of p, n type dopant and Mn co-doped GaN2009-03-14ACTA PHYSICA SINICA
105First principle study of Mg, Si and Mn co-doped GaN2009-03-14ACTA PHYSICA SINICA
106Al 组分对Al GaN/GaN量子级联激光器性能的影响2009-03-14发光学报
107GaN基三阱量子级联激光器结构的垒层Al组分分析2009-03-14华南师范大学学报(自然科学版)
108GaN基LED溢出电流的模拟2009-03-14光子学报
109Improved optical performance of GaN grown on pattered sapphire substrate2009-03-14Journal of   Semiconductors
110Li、N共掺杂实现P 型ZnO 的机理探讨2009-03-14材料科学与工程学报
111High-efficiency red polymer light-emitting diodes based on optimizing blend polymer host2009-03-14SYNTHETIC METALS
112Efficient White Light Emission Using a Single Copolymer with Red and Green Chromophores on a Conjugated Polyfluorene Backbone Hybridized with InGaN-Based Light-Emitting Diodes2009-03-14CHINESE PHYSICS LETTERS
113Influence of a p-InGaN/GaN short-period superlattice on the performance of GaN-based light-emitting diodes2009-03-14SEMICONDUCTOR SCIENCE AND TECHNOLOGY
114GaP single crystal layers grown on GaN by MOCVD2009-03-14Proc. of SPIE
115High efficiency phosphorescence light-emitting diodes with conjugated polymer host2009-03-14ACTA PHYSICA SINICA
116Ferromagnetism and the optical properties of Cu-doped AIN from first-principles study2009-03-14ACTA PHYSICA SINICA
117Electronic structure and the optical properties of GaN (0001) surface from first-principles study2009-03-14Proceedings of SPIE
118Numerical modeling of thermionic electrons in abrupt isotype heterojunction for the light emitting transistor2009-03-14Proceedings of SPIE
119AlN Based Diluted Magnetic Semiconductors from First-principles Study2009-03-14Photonics and Optoelectronics Meetings
120产学研相结合建设LED研发实验室2009-03-14实验技术与管理
121MG,CD掺杂AIN电子结构的第一性原理计算2009-03-14华南师范大学学报(自然科学版)
122自发辐射对量子级联激光器发光噪声的影响2009-03-14发光学报
123量子级联探测器研究进展2009-03-14激光与光电子学进展
124掺杂GaN的湿法刻蚀研究2009-03-14微纳电子技术
125Zn,Cd掺杂AlN电子结构的第一性原理计算2009-03-14发光学报
126Localized surface plasmons, surface plasmon polaritons, and their coupling in 2D metallic array for SERS2010-02-01Optics Express, v 18, n 3, p 1959-1965, February 1, 2010
127Localized surface plasmons, surface plasmon polaritons, and their coupling in 2D metallic array for SERS2010-02-01Optics Express, v 18, n 3, p 1959-1965, February 1, 2010
128Structures and thermodynamic properties of ZnSe2010-03-01Gongneng Cailiao/Journal of Functional Materials, v 41, n 3, p 481-483+487, March 2010
129Structures and thermodynamic properties of ZnSe2010-03-01Gongneng Cailiao/Journal of Functional Materials, v 41, n 3, p 481-483+487, March 2010
130A study of the relations between lossless and lossy cases2010-06-07Optics Express, v 18, n 12, p 12213-12225, June 7, 2010
131A study of the relations between lossless and lossy cases2010-06-07Optics Express, v 18, n 12, p 12213-12225, June 7, 2010
132Study on enhancing the light output of GaN-based LED by using Ni nanoparticle mask2010-07-01Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 21, n 7, p 966-969, July 2010
133Influence of annealing temperature on properties of tantalum-doped indium tin oxide films2010-07-01Cailiao Rechuli Xuebao/Transactions of Materials and Heat Treatment, v 31, n 7, p 25-29, July 2010
134Study on enhancing the light output of GaN-based LED by using Ni nanoparticle mask2010-07-01Guangdianzi Jiguang/Journal of Optoelectronics Laser, v 21, n 7, p 966-969, July 2010
135Influence of annealing temperature on properties of tantalum-doped indium tin oxide films2010-07-01Cailiao Rechuli Xuebao/Transactions of Materials and Heat Treatment, v 31, n 7, p 25-29, July 2010
136Si图形衬底的制备及半极性GaN生长2010-08-01华南师范大学学报
137First-principles of wurtzite ZnO (0001) and (0001) surface structures2010-08-01Journal of Semiconductors, v 31, n 8, August 2010
138GaP:Mg layers grown on GaN by MOCVD2010-08-01Journal of Crystal Growth
139Light Emission from Nanoscale Si/Si Oxide Materials2010-08-01JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
140Optical properties of GaMnN films grown by metal-organic chemical vapor deposition2010-08-01ACTA PHYSICA SINICA
141Theoretical analysis on the improvement of p-type ZnO by B-N codoping2010-08-01ACTA PHYSICA SINICA
142Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes2010-08-01CHINESE PHYSICS B
143Theoretical study of Fe-doped p-type ZnO2010-08-01APPLIED PHYSICS LETTERS
144Study of the electronic structure and the properties of p-type doping in Cd : O codoped AIN2010-08-01ACTA PHYSICA SINICA
145Proposal of a polarization-insensitive echelle grating demultiplexer based on a nanophotonic silicon-on-insulator platform through a dual-grating system2010-08-01OPTICS LETTERS
146First-principles calculations of ZnO polar surfaces and N adsorption mechanism2010-08-01ACTA PHYSICA SINICA
147Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching2010-08-01CHINESE PHYSICS B
148The influence of the Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (111) substrate2010-08-01JOURNAL OF CRYSTAL GROWTH
149Gain-assisted propagation of surface plasmon polaritons via electrically pumped quantum wells2010-08-01OPTICS LETTERS
150GaP layers grown on GaN with and without buffer layers2010-08-01CHINESE PHYSICS B
151A pentacene field-effect transistor with light-programmable threshold voltage2010-08-01ORGANIC ELECTRONICS
152Effect of methanol treatment on performance of phosphorescent dye doped polymer light-emitting diodes2010-08-01SYNTHETIC METALS
153Surface plasmon interference on the surface of an aluminum-covered fiber core array for solgel fabrication of submicrometer gratings2010-08-01OPTICS LETTERS
154First-principles of wurtzite ZnO (0001) and (0001) surface structures2010-08-01Journal of Semiconductors, v 31, n 8, August 2010
155Spontaneous and stimulated emission ofZnO/Zn0.85Mg0.15Oasymmetric double quantum wells2010-09-08SUPERLATTICE MICROST
156• Analysis of wetting layer effect on electronic structures of truncated-pyramid quantum dots2010-12-062010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics
157A novel design of triplexer based on Bragg grating assisted MMI coupler2010-12-06Advances in Opto-electronics and Micro/nano-optics
158Coupled resonator-induced transparency in ring-bus-ring Mach-Zehnder interferometer2011-01-01JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS
159Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED2011-01-01ACTA PHYS SIN-CH ED
160Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer2011-01-15ACTA PHYS SIN-CH ED
161Enhancing the performance of polymer light-emitting diode via methanol treatment2011-01-20Journal of Luminescence
162Surface plasmon interference pattern on the surface of a silver-clad planar waveguide as a sub-micron lithography tool2011-02-01Science China, Physics, Mechanics & Astronomy
163Structural, optical and electronic properties of P doped p-type ZnO thin film2011-02-03PHYSICA B
164Analysis of electronic structures of quantum dots using meshless Fourier transform k.p method2011-03-15JOURNAL OF APPLIED PHYSICS
165Comparison of nitride-based dual-wavelength light-emitting diodes with an InAlN electron-blocking layer and with p-type doped barriers2011-04-01Chinese Physics B
166Ultrathin nickel oxide film as a hole buffer layer to enhance the optoelectronic performance of a polymer light-emitting diode2011-04-15Optics Letters
167不同产地石菖蒲的挥发性成分研究2011-04-28分析测试学报
168基于正交实验法的高亮度大功率LED仿真设计2011-06-01光电技术应用
169图形衬底参数对LED发光效率的影响2011-06-08光学学报(EI)
170ZnO(0001) 表面吸附B 的电子结构和光学性质研究2011-06-08物理学报
171Cu吸GaN(0001)表面的第一性原理计算2011-06-08光学学报
172P型ZNO纳米线及其表面H钝化的理论分析2011-06-08光学学报
173P型ZnO纳米线及其表面犎钝化的理论分析2011-06-08光学学报
174Cu吸附GaN(0001)表面的第一性原理计算2011-06-08光学学报
175The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron2011-06-30CHINESE PHYS B
176Theoretical study of the effect of changes in the number of quantum wells of dual-wavelength LED2011-07-01ACTA PHYS SIN-CH ED
177Fabrication of ZnO nanowall-network ultraviolet photodetector on Si substrates2011-07-12半导体学报
178衬底温度对ZnO薄膜的结构和光学特性的影响2011-07-18发光学报
179Study of GaP single crystal layers grown on GaN by MOCVD2011-07-20MATER RES BULL
180Performance enhancement of blue light-emitting diodes with a special designed  AlGaN/GaN superlattice electron-blocking layer2011-09-15Appl. Phys. Lett
181LED原材料专利信息分析与研究2011-12-01照明工程学报
182Performance enhancement of blue light-emitting diodes without an electron-blocking layer by using special designed p-type doped InGaN barriers2012-01-02OPTICS EXPRESS
183Temporal coupled-mode theory of ring-bus-ring Mach-Zehnder interferometer2012-01-27Optical Society of America
184Na,N双受主共掺杂P型ZnO第一原理研究2012-01-30功能材料
185反对称n-AlGaN层对GaN基双蓝光波长发光二极管性能的影响2012-02-02ACTA PHYS SIN-CH ED
186The influence of A1GaN/GaN superlattices as electron blocking layers on the performance of blue InGaN light-emitting diodes2012-03-01CHINESE PHYS B
187退火温度对ZnO掺杂ITO薄膜性能的影响2012-03-02光电子.激光
188Elimination of spurious solutions from k·p theory with Fourier transform technique and Burt-Foreman operator ordering2012-03-05JOURNAL OF APPLIED PHYSICS
189First-principles study of magnetic properties in V-doped GaN2012-03-09CHEM PHYS LETT
190Annealing effect on the bipolar resistive switching behaviors of BiFeO3 thin films2012-03-21J ALLOY COMPD
191选择性p 型量子阱垒层掺杂在双波长发光二极管光谱调控中的作用2012-04-01ACTA PHYS SIN-CH ED
192Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer2012-04-03APPL PHYS LETT
193Comparative investigation of unipolar resistance switching effect2012-04-25APPL PHYS A-MATER
194Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers2012-04-26CHINESE PHYS B
195Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers2012-05-01CHINESE PHYS B
196Improved color rendering of phosphor-converted white light-emitting diodes with dual-blue layers and n-type AlGsaN layer2012-05-01OPT LETT
197Analysis of an ultra-compact wavelength filter based on hybrid plasmonic waveguide structure2012-05-15OPT LETT
198Optical and photoluminescence properties of BiFeO3 thin films grown on ITO2012-05-17PHYS STATUS SOLIDI A
199High-efficiency conjugated-polymer-hosted blue phosphorescent2012-05-31CHINESE SCI BULL
200Investigation of GaN-based dual-wavelength light-emitting diodes with p-type barriers and vertically stacked quantum wells2012-06-01CHIN OPT LETT
201Enhanced Performance of Blue Light-Emitting Diodes With InGaN/GaN Superlattice as Hole Gathering Layer2012-06-08IEEE PHOTONIC TECH L
202The preparation and performance analysis of GaN-based high-voltage DC light emitting diode2012-07-01ACTA PHYS SIN-CH ED
203LED 路灯专利信息分析与研究2012-07-01科技管理研究
204Advantage of dual wavelength light-emitting diodes with dip-shaped quantum wells2012-07-01CHINESE SCI BULL
205Numerical study of spectrum-control in dual-wavelength LED with doped quantum well barriers of different doping concentration2012-07-01ACTA PHYS SIN-CH ED
206First-principles analysis on V-doped GaN2012-07-01OPT MATER
207Performance enhancement of near-UV light-emitting diodes with an InAlN/GaN superlattice electron-blocking layer2012-07-11IEEE ELECTR DEVICE L
208六方系InAlGaN晶体的长波长光学声子研究2012-08-01发光学报
209FERROMAGNETIC PROPERTIES IN V-DOPED AlN FROM FIRST PRINCIPLES2012-08-10MOD PHYS LETT B
210Study on Long-wavelength Optical Phonons in Hexagonal InAlGaN Crystals2012-08-15发光学报
211第一性原理研究Te-N共掺P型ZnO2012-09-01ACTA PHYS SIN-CH ED
212In assisted realization of p-type C-doped ZnO: A first-principles study2012-09-01PHYSICA B
213Improved efficiency droop in a GaN-based light-emitting diode with an AlInN electron-blocking layer2012-09-01CHINESE PHYS LETT
214Correction to Performance Enhancement of Near-UV Light-Emitting Diodes With an InAlN/GaN Superlattice Electron-Blocking Layer2012-09-07IEEE ELECTR DEVICE L
215First-principles prediction of a new class of photovoltaic materials: I-III-IV2-V4 phosphides2012-09-10J APPL PHYS
216纤锌矿BeO掺Cd的电子结构与能带特性研究2012-09-10ACTA PHYS SIN-CH ED
217Electrical and Optical Properties of p-Type Li,Cu-Codoped NiO thin film2012-09-11J ELECTRON MATER
218Improvement of Efficiency Droop in Blue InGaN Light-Emitting Diodes With p-InGaN/GaN Superlattice Last Quantum Barrier2012-11-01IEEE PHOTONICS TECHNOLOGY LETTERS
219Theoretical study of luminance of GaN quantum dots planted in quantum well2012-11-01ACTA PHYS SIN-CH ED
220白豆蔻、红豆蔻、草豆蔻和肉豆蔻挥发油成分的比较2012-11-02应用化学
221Micro patterning replication of planar optical elements on silicone LED encapsulant film using imprinting technique2012-11-07ACP
222Study of an SPP mode with gain medium based on a hybrid plasmonic structure2012-11-07Communications and Photonics Conference (ACP), 2012 Asia
223Synthesis and photovoltaic properties of dithienosilole-based copolymers2012-11-11J Mater Sci: Mater Electron
224Droop improvement in blue InGaN light emitting diodes with AlGaN/InGaN superlattice barriers2012-11-12ACP Technical Digest © 2012 OSA
225Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers2012-11-12CHINESE PHYS B
226Be和Ca掺杂纤锌矿ZnO的晶格常数与能带特性研究2012-11-15ACTA PHYS SIN-CH ED
227量子阱数量变化对InGaN/AlGaN LED的影响2012-12-01Chinese Journal of Luminescence
228Simulation of the Advantages in Dual-Wavelength Light-Emitting Diodes by Changing the Last Two GaN Barriers into InGaN Barriers2012-12-01ICECC '12 Proceedings of the 2012 International Conference on Electronics
229渐变型量子阱垒层厚度对GaN基双波长发光二极管发光特性调控的研究2012-12-01ACTA PHYS SIN-CH ED
230红光LED尺寸对ITO电流扩展的影响2012-12-03半导体技术
231Be1-xMgxO合金的能带特性与相结构稳定性的研究2012-12-08ACTA PHYS SIN-CH ED
232Investigation of GaN-based light-emitting diodes using a p-GaN/i-InGaN short-period superlattice structure as last quantum barrier2013-01-01Sci China Tech Sci
233High Internal Quantum Efficiency Blue Light-emitting Diodes with Triangular Shaped InGaN/GaN Multiple Quantum Wells2013-01-01chinese journal of luminescence
234A novel hybrid plasmonic waveguide with loss compensation via electrically pumped gain medium based on silicon platform2013-01-15optics communications
235Luminescent Properties of New MgAl2O4/Ce:YAG transparent ceramics for white led applications2013-02-01CHINESE JOURNAL OF LUMINESCENCE
236A novel all-optical logic gate device based on a hybrid plasmonic waveguide on silicon-on-insulator chip2013-02-01NANOSCI NANOTECH LET
237Electrical bistabilities of write-once-read-many-times memory devices fabricated utilizing indium tin oxide nanoparticles embedded in a poly 4-vinyl phenol layer2013-02-01NANOSCI NANOTECH LET
238A hybrid plasmonic multimode interference splitter based on metal-gap-silicon waveguides2013-02-01NANOSCI NANOTECH LET
239Thermal conductivity of Cu/diamond composites by orthogonal experiment method2013-02-01Diamond & Abrasives Engineering
240First-principles study on the energy bandgap bowing parameter of wurtzite BexZn1-xO2013-02-05ACTA PHYS SIN-CH ED
241A dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells2013-02-10CHINESE PHYS B
242湿法腐蚀GaP对LED性能的影响2013-02-13半导体技术
243Performance Improvement of Blue InGaN Light鄄emitting2013-03-01发光学报
244表面等离激元的操控: 原理与研究进展2013-03-13华南师范大学学报 ( 自然科学版)
245Enhanced performance of InGaN/GaN based solar cells with an In0.05Ga0.95N ultra-thin inserting layer between GaN barrier and In0.2Ga0.8N well2013-03-30OPT EXPRESS
246Journal of Magnetism and Magnetic Materials2013-04-01Journal of Magnetism and Magnetic Materials
247Effect of polarization-matched n-type AlGaInN electron-blocking layer on the optoelectronic properties of blue InGaN light-emitting diodes2013-04-01J DISP TECHNOL
248Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer 22013-04-09Chin. Phys. B
249Performance enhancement of InGaN light-emitting diode with an AlGaN/InGaN superlattice electron-blocking layer2013-04-09CHINESE PHYS B
250Structure Optimization of Multiple Quantum Wells in Near Ultraviolet Light Emitting Diodes with 380 nm Wavelength2013-05-01CHINESE JOURNAL OF LUMINESCENCE
251Preparation and Optical Properties of MgAl2 O4/Ce:YAG Transparent Ceramic2013-05-01SPECTROSC SPECT ANAL
252A GaN-based LED with perpendicular structure fabricated on a ZnO substrate by MOCVD2013-05-01J DISP TECHNOL
253Droop improvement in blue InGaN light-emitting diodes with GaN/InGaN superlattice barriers2013-05-25CHINESE PHYS B
254respeonse characteristic of blue light-emitting diodes2013-06-01acta optica sinca
255Proposal of a wavelength filter with a cut corner based on Equilateral-Triangle-Resonator2013-06-01OPT EXPRESS
256Modeling of Vertical GaN Based Resonant Cavity Light-Emitting Diode2013-06-262013 International Conference on Mechatronic System and Materials Application,ICMSMA
257Optimized design and performance research of the High-voltage LEDs chipset2013-06-272013 International Conference on Mechatronic System and Materials Application,ICMSMA
258Focusing and demultiplexing of an in-plane hybrid plasmonic mode based on the planar concave grating2013-07-01OPT COMMUN
259Efficiency enhancement of InGaN light-emitting diode with p-AlGaN/GaN superlattice last quantum barrier2013-07-12CHINESE PHYS B
260Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content2013-07-30CHINESE PHYS B
261Advantages of GaN based light-emitting diodes with p-AlGaN/InGaN superlattice last quantum barrier2013-08-16OPT COMMUN
262Investigation of blue InGaN light-emitting diodes with p-AlGaN/InGaN superlattice interlayer2013-08-23APPL PHYS A-MATER
263Advantages of an InGaN-based light emitting diode with a p-InGaN/p-GaN superlattice hole accumulation layer2013-08-25CHINESE PHYS B
264Performance enhancement of blue InGaN light-emitting diodes with InGaN barriers and dip-shaped last barrier2013-09-01IEEE T ELECTRON DEV
2652D pillar-chained lanthanide(III)-copper(I) metal-organic frameworks based on isonicotinate and in situ generated oxalate 22013-09-08Inorganic Chemistry Communications
266Performance improvement of blue InGaN light-emitting diodes with a specially designed n-AlGaN hole blocking layer2013-09-09CHINESE PHYS B
267Low-threshold lasing action in an asymmetric double ZnO/ZnMgO quantum well structure2013-09-17Applied Physics Letters
268Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells2013-09-30CHINESE PHYS B
269Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers2013-09-30CHINESE PHYS B
270InGaN-Based Blue Light Emitting Diodes with AlInN-GaN-AlInN Electron Blocking Layers2013-09-30CHINESE PHYS LETT
271Influence of Si doping on the structural and optical properties of InGaN epilayers2013-10-01CHINESE PHYS B
272Effect of InxGa1-xN "continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition2013-10-01CHINESE PHYS B
273Fabrication of GaN-based LEDs with 22 degrees undercut sidewalls by inductively coupled plasma reactive ion etching2013-10-01CHINESE PHYS B
274Analysis on Patent Information of MOCVD Equipment in LED Industry2013-10-01ZHAOMING GONGCHENG XUEBAO
275Investigation of blue InGaN light-emitting diodes with AlGaN barriers of the increasing Al composition2013-10-04J APPL PHYS
276Transient Analysis of InGaN/GaN Light-emitting Diode with Varied Quantum Well Number2013-10-13发光学报
277三明治结构电子阻挡层中势阱深度对LED性能的影响2013-10-16CHINESE JOURNAL OF LUMINESCENCE
278Local Doping Modulation for Improving Quantum Efficiency in GaN-Based Light-Emitting Diodes2013-10-22JPN J APPL PHYS
279Preparation of MgAl2O4/Ce:YAG Transparent Ceramics by Hot-pressed Sintering and Its Microstructure2013-11-01RARE METAL MATERIALS AND ENGINEERING
280The spectrum-control of dual-wavelength LED with quantum dots planted in quantum wells2013-11-01ACTA PHYS SIN-CH ED
281preparation and luminescent properties of PC/YAG:Ce fluorescent resin2013-11-01chinese journal of luminescence
282Advantages of blue InGaN light-emitting diodes without an electron-blocking layer by using AlGaN step-like barriers2013-11-05APPL PHYS A-MATER
283Preparation and Luminescent Properties of Light Scattering Fluorescent Resin2013-12-01SPECTROSC SPECT ANAL
284Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection layer2013-12-10CHINESE PHYS B
285Exploring the binding of 4-thiothymidine with Human Serum Albumin by spectroscopy, atomic force microscopy and molecular modeling methods2014-01-20Carbohydrate Research
286Mode conversion in asymmetric dielectric/metal/dielectric plasmonic waveguide using grating coupler2014-01-22Optics Communications
287Stabilizing resistive switching performances of TiN/MgZnO/ZnO/Pt heterostructure memory devices by programming the proper compliance current2014-01-31APPL PHYS LETT
288Performance improvement of GaN-based light-emitting diode with a p-InAlGaN hole injection2014-02-01Chinese Physics B
289Advantages of GaN based light-emitting diodes with p-AlGaN/InGaN superlattice last quantum2014-02-01Optics Communications
290Advantages of blue InGaN light-emitting diodes without an electron-blocking layer by using AlGaN step-like2014-02-04Appl. Phys. A
291H2气氛退火处理对Nb掺杂TiO2薄膜光电性能的影响2014-02-14物理学报
292Influence of structure and atom sites on Sn-based anode materials for lithium ion batteries: a first-principle study2014-02-22Chinese Science Bulletin
293W掺杂对β-Ga2O3导电性能影响的理论研究2014-03-05物理学报
294SnS电子结构和光学性质的第一性原理研究2014-03-08华南师范大学学报:自然科学版
295Surface-enhanced Raman spectroscopic analysis of maleic hydrazide adsorbed on gold surface2014-03-25Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy
296A GaN AlGaN InGaN last quantum barrier in an InGaN/GaN multiple-quantum-well blue LED2014-04-01Chin. Phys. B
297Performance Enhancement of Blue Light-Emitting Diodes by adjusting the p-Type Doped Last Barrier2014-04-04APPL PHYS A-MATER
298Ga掺杂对纤锌矿TM0.125Zn0.875O(T=Be,Mg)电子结构和光学能隙的影响2014-04-13物理学报
299Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers2014-05-01Chin. Phys. B
300First-principles study of effects of Al doping on electronic structures and optical properties of SnO22014-05-03Materials Research Innovations
301Performance enhancement of InGaN light-emitting diodes with a leakage electron recombination quantum well2014-05-17Appl. Phys. A
302Enhanced photovoltaic performance of organic/silicon nanowire hybrid solar cells by solution- evacuated method2014-06-01optics letters
303Performance of Blue LEDs With N-AlGaN/N-GaN Superlattice as Electron-Blocking Layer2014-06-01IEEE PHOTONICS TECHNOLOGY LETTERS
304Electronic structures and energy band properties of Be- and S-doped wurtzite ZnO2014-06-01Chinese Physics B
305Thermo-catalytic decomposition of formaldehyde: a novel approach to produce mesoporous ZnO for enhanced photocatalytic activities2014-06-04NANOTECHNOLOGY
306β-Ga2O3掺Al的电子结构与能带特性研究2014-06-30功能材料
307Improved photoluminescence in InGaN/GaN strained quantum wells2014-07-01CHINESE PHYS LETT
308MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices2014-07-01CHINESE SCI BULL
309Complementary switching on TiN/MgZnO/ZnO/Pt bipolar memory devices for nanocrossbar arrays2014-07-05J ALLOY COMPD
310基于一种易于制作的混合型表面等离激元波导结构的超紧凑截线滤波器2014-07-15发光学报
311Electronic structures and optical properties of IIIA-doped wurtzite Mg0.25Zn0.75O2014-08-01Chinese Physics B
312Advantages of GaN-Based Light-Emitting Diodes With Polarization-Reduced Chirped Multiquantum Barrier2014-08-30IEEE TRANSACTIONS ON ELECTRON DEVICES
313SnO2薄膜与n-SnO2/p-Si 异质结光电特性的研究2014-09-11华南师范大学学报:自然科学版
314Investigation of AlGaN-based deep-ultraviolet light-emitting diodes with composition-varying AlGaN multilayer barriers2014-10-24Superlattice and Microstructures
315Superfine TiO2/SnO2/Carbon Hybrid Nanocomposite with Greatly Enhanced Electrochemical Properties2014-11-20Electrochimica Acta
316光散射PC荧光树脂的制备及光学性能2014-12-03光谱学与光谱分析

 

 

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